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Other articles related with "nanowire transistor"：
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17701 |
Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华) |
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Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor |
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Chin. Phys. B
2022 Vol.31 (1): 17701-017701
[Abstract]
(455)
[HTML 1 KB]
[PDF 3301 KB]
(110)
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38104 |
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Fu-Hua Yang(杨富华) |
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Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors |
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Chin. Phys. B
2020 Vol.29 (3): 38104-038104
[Abstract]
(583)
[HTML 1 KB]
[PDF 2676 KB]
(179)
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127302 |
Xiao-Di Zhang(张晓迪), Wei-Hua Han(韩伟华), Wen Liu(刘雯), Xiao-Song Zhao(赵晓松), Yang-Yan Guo(郭仰岩), Chong Yang(杨冲), Jun-Dong Chen(陈俊东), Fu-Hua Yang(杨富华) |
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Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor |
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Chin. Phys. B
2019 Vol.28 (12): 127302-127302
[Abstract]
(661)
[HTML 1 KB]
[PDF 1850 KB]
(152)
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107303 |
Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Ya-Mei Dou(窦亚梅), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华) |
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Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors |
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Chin. Phys. B
2019 Vol.28 (10): 107303-107303
[Abstract]
(541)
[HTML 1 KB]
[PDF 1057 KB]
(129)
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66804 |
Ya-Mei Dou(窦亚梅), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Xiao-Song Zhao(赵晓松), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华) |
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Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor |
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Chin. Phys. B
2019 Vol.28 (6): 66804-066804
[Abstract]
(610)
[HTML 1 KB]
[PDF 600 KB]
(116)
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97310 |
Xiao-Song Zhao(赵晓松), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Ya-Mei Dou(窦亚梅), Fu-Hua Yang(杨富华) |
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Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors |
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Chin. Phys. B
2018 Vol.27 (9): 97310-097310
[Abstract]
(599)
[HTML 1 KB]
[PDF 2113 KB]
(148)
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88106 |
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Yang-Yan Guo(郭仰岩), Ya-Mei Dou(窦亚梅), Fu-Hua Yang(杨富华) |
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Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors |
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Chin. Phys. B
2018 Vol.27 (8): 88106-088106
[Abstract]
(736)
[HTML 0 KB]
[PDF 2083 KB]
(195)
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97301 |
Chang-Sheng Li(李长生), Lei Ma(马磊), Jie-Rong Guo(郭杰荣) |
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Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants |
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Chin. Phys. B
2017 Vol.26 (9): 97301-097301
[Abstract]
(559)
[HTML 0 KB]
[PDF 776 KB]
(202)
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108102 |
Hao Wang(王昊), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Wang Zhang(张望), Qi-Feng Lyu(吕奇峰), Liu-Hong Ma(马刘红), Fu-Hua Yang(杨富华) |
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Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor |
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Chin. Phys. B
2016 Vol.25 (10): 108102-108102
[Abstract]
(667)
[HTML 1 KB]
[PDF 1432 KB]
(385)
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68103 |
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Hao Wang(王昊), Qi-feng Lyu(吕奇峰), Wang Zhang(张望), Xiang Yang(杨香), Fu-Hua Yang(杨富华) |
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Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing |
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Chin. Phys. B
2016 Vol.25 (6): 68103-068103
[Abstract]
(705)
[HTML 1 KB]
[PDF 1793 KB]
(380)
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128101 |
Ma Liu-Hong (马刘红), Han Wei-Hua (韩伟华), Wang Hao (王昊), Yang Xiang (杨香), Yang Fu-Hua (杨富华) |
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Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors |
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Chin. Phys. B
2015 Vol.24 (12): 128101-128101
[Abstract]
(801)
[HTML 1 KB]
[PDF 1597 KB]
(410)
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88107 |
Wang Hao (王昊), Han Wei-Hua (韩伟华), Ma Liu-Hong (马刘红), Li Xiao-Ming (李小明), Yang Fu-Hua (杨富华) |
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Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures |
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Chin. Phys. B
2014 Vol.23 (8): 88107-088107
[Abstract]
(560)
[HTML 1 KB]
[PDF 1831 KB]
(470)
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88104 |
Xuan Rui-Jie (轩瑞杰), Liu Hui-Xuan (刘慧宣 ) |
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Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors |
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Chin. Phys. B
2012 Vol.21 (8): 88104-088104
[Abstract]
(1233)
[HTML 1 KB]
[PDF 3444 KB]
(1096)
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